As operating voltages of GaN devices increase – the need for miniature capacitors capable of bias supply operation & large energy delivery grows.“ “ The pulse power capability of GaN in RF applications has lead to the need of miniature capacitors with the ability to deliver large pulses of energy. Associated with that are optimization for low noise applications and operation at higher temperatures.“īut, how is this reflected in requirements and use of capacitors in future GaN systems ? Simply put, these features allows GaN devices to outperform other RF technologies and deliver more power across the RF spectrum.ĭesigners can maximize the size of a GaN device for maximum power or they can make reduce device size and therefore offer high ultra miniature packages with respectable power capability. End users recognize the advantages of GaN technology as an ability to operate under higher currents and voltages.
“ GaN devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors and MMICs. Ron Demcko, Fellow, AVX commented the latest GaN evolution:
EPCI teamed up with University of West Bohemia, in Pilsen, Czech Republic who performed assessment of temperature stability on GaN power amplifiers with originally designed-in tantalum capacitors to explain its functionality and capabilities.
Source: EPCI, download the article in pdf:ĪVX Corporation asked EPCI to have a look at use of tantalum capacitors on board of GaN power amplifiers and perform some experimental test evaluation.